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    STPSC2H065B-TR

    650 V, 2 A High Surge Silicon Carbide Power Schottky Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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    Key features
    Key features
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • High forward surge capability
    • ECOPACK2 compliant component
    • Power efficient product
    In stock
    Quantity $ per unit Savings
    1-9$1.480%
    10-70$1.2317%
    70 + Contact sales
    $1.48
    $1.48
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
    Read More

    Key features
    Key features
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • High forward surge capability
    • ECOPACK2 compliant component
    • Power efficient product