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STPSC2H065B-TR

650 V, 2 A High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • ECOPACK2 compliant component
  • Power efficient product
In stock
Quantity $ per unit Savings
1-9$1.480%
10-70$1.2317%
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$1.48
$1.48
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • ECOPACK2 compliant component
  • Power efficient product