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STPSC2H065B-TR

Active

650 V, 2 A High Surge Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$1.600%
10 - 70$1.459%
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Out of stock
$1.60
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameDPAK

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions.

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • ECOPACK2 compliant component
  • Power efficient product