NRND
STPSC2H12B-TR1
1200 V power Schottky silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | DPAK HV 2L |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $1.80 | 0% |
| 10-99 | $1.63 | 9% |
| 100-499 | $1.31 | 27% |
| 500 | $1.08 | 40% |
| 500 + | Contact sales | |
$1.80
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | DPAK HV 2L |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|