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STPSC2H12B2Y-TR

Automotive 1200 V, 2 A High surge Silicon Carbide Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDPAK HV 2L

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • PPAP capable
  • No or negligible reverse recovery
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Creepage distance of 3 mm as per IEC 60664-1
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$2.410%
10-50$2.0117%
Contact sales
$2.41
$2.41
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameDPAK HV 2L

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • PPAP capable
  • No or negligible reverse recovery
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Creepage distance of 3 mm as per IEC 60664-1
  • ECOPACK2 compliant component