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    STPSC30G065L2Y

    650 V, 30 A high surge silicon carbide power Schottky diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameHU3PAK
    Description

    The SiC diode STPSC30G065L2Y, housed in HU3PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
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    Key features
    Key features
    • AEC-Q101 qualified and PPAP capable
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to 175 °C
    • SMD with top side cooling package (HU3PAK)
    • ECOPACK2 compliant component
    Out of Stock
    Quantity $ per unit Savings
    1-500$9.800%
    500 + Contact sales
    $9.80
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameHU3PAK
    Description

    The SiC diode STPSC30G065L2Y, housed in HU3PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified and PPAP capable
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to 175 °C
    • SMD with top side cooling package (HU3PAK)
    • ECOPACK2 compliant component