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1200 V power Schottky silicon carbide diode
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-247 long leads |
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $9.62 | 0% |
10-24 | $8.07 | 16% |
25-99 | $7.91 | 18% |
100-500 | $7.75 | 19% |
500 + |
Contact sales |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-247 long leads |
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
Read More
|