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STPSC40G12WL

1200 V, 40 A High surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameDO247 LONG LEADS

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
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Key features
  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -55 °C to 175 °C
  • Avalanche energy rated
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$19.060%
10-24$17.528%
25-49$16.8012%
50-99$16.2515%
100-249$14.8022%
250-500$14.0726%
Contact sales
$19.06
$19.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameDO247 LONG LEADS

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
Read More

Key features
  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -55 °C to 175 °C
  • Avalanche energy rated
  • ECOPACK2 compliant component