Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    main product photo

    Active

    STPSC4G065UFY

    Automotive 650 V, 4A power Schottky High Surge silicon carbide diode

    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeAutomotive
    Package NameSMBFlat
    Description

    The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified and PPAP capable
    • None or negligible reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component
    Out of Stock
    Parameters
    Operating RangeAutomotive
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeAutomotive
    Package NameSMBFlat
    Description

    The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified and PPAP capable
    • None or negligible reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component