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STPSC4G065UFY

Automotive 650 V, 4A power Schottky High Surge silicon carbide diode

Operating RangeAutomotive
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSMBFlat

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
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Key features
  • AEC-Q101 qualified and PPAP capable
  • None or negligible reverse recovery charge in application current range
  • Switching behaviour independent of temperature
  • High forward surge capability
  • Operating Tj from -55 °C to +175 °C
  • ECOPACK2 compliant component
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Operating RangeAutomotive
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSMBFlat

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery...
Read More

Key features
  • AEC-Q101 qualified and PPAP capable
  • None or negligible reverse recovery charge in application current range
  • Switching behaviour independent of temperature
  • High forward surge capability
  • Operating Tj from -55 °C to +175 °C
  • ECOPACK2 compliant component