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STPSC4H065B-TR
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | DPAK |
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $1.85 | 0% |
| 10-99 | $1.55 | 16% |
| 100-499 | $1.23 | 34% |
| 500 | $1.04 | 44% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | DPAK |
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More
|