STPSC4H065DI

STPSC4H065DI

STPSC4H065B-TR Active

650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1 (*)
GradeIndustrial
Package NameDPAK
Key Features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 VRMS
    • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


This STPSC4H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

In stock:
$1.49
Range Unit Price Savings
1 - 9$1.490%
10 - 99$1.2615%
100 - 499$0.9636%
500$0.8344%
Contact Sales