STPSC4H065DI

STPSC4H065DI

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STPSC4H065B-TR

650 V, 4 A High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2 (**)
GradeIndustrial
Package NameDPAK

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 VRMS
    • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component
In stock
Quantity $ per unit Savings
1-9$1.850%
10-99$1.5516%
100-499$1.2334%
500$1.0444%
Contact sales
$1.85
$1.85
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2 (**)
GradeIndustrial
Package NameDPAK

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
    • Insulated voltage: 2500 VRMS
    • Typical package capacitance: 7 pF
  • Power efficient product
  • ECOPACK®2 compliant component