STPSC4H065DI

650 V, 4 A High Surge Silicon Carbide Power Schottky Diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220AC Ins

Description

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features

Key features
No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: Insulated voltage: 2500 V_RMS Typical package capacitance: 7 pF Power efficient product ECOPACK^®2 compliant component

In stock

Quantity	$ per unit	Savings
1-9	$2.72	0%
10-50	$2.19	20%
50 +	Contact sales

$2.72

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220AC Ins

Description

Key features

Key features
No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: Insulated voltage: 2500 V_RMS Typical package capacitance: 7 pF Power efficient product ECOPACK^®2 compliant component