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    Special offer on selected Evaluation Tools. Use code AUG-EVALTOOLS-01-10OFF and explore the full selection. Buy now!

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    STPSC5G12B2-TR

    1200 V, 5 A High surge Silicon Carbide Power Schottky Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK HV 2L
    Description

    The SiC diode, available in DPAK HV 2L, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no...
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    Key features
    Key features
    • None or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -55 °C to 175 °C
    • DPAK HV creepage distance (anode to cathode) = 3 mm min.
    • ECOPACK2 compliant component
    Coming Soon
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK HV 2L
    Description

    The SiC diode, available in DPAK HV 2L, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no...
    Read More

    Key features
    Key features
    • None or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -55 °C to 175 °C
    • DPAK HV creepage distance (anode to cathode) = 3 mm min.
    • ECOPACK2 compliant component