NRND
STPSC5H12B-TR1
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | DPAK HV 2L |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|
Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $3.04 | 0% |
| 10-99 | $2.73 | 10% |
| 100-499 | $2.21 | 27% |
| 500 | $1.81 | 40% |
| 500 + | Contact sales | |
$3.04
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | DPAK HV 2L |
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|