Currency
USD
  • Language
    English
    • Toggle Nav
    Cart 0
    Search
    Advanced Search
    Menu
    Account
    Settings
  • Language
    English
    • Currency
    USD

    📢 Promotion ends on Mar. 31st! Get FREE SHIPPING for your automotive project! Order now! 🛒

    main product photo

    STPSC6H065BY-TR

    Active

    Free

    Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
    Learn More about STPSC6H065BY-TR

    Quantity $ per Unit Savings
    1 - 9$2.510%
    10 - 50$2.2610%
    50 + Contact Sales
    Save to My List Compare
    In stock
    $2.51
    or
    Parameter NameParameter Value
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameDPAK

    The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


    Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions.

    Key features
    • AEC-Q101 qualified
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Recommended to PFC applications
    • PPAP capable
    • ECOPACK®2 compliant component