📢 Free shipping is live! - FREE worldwide delivery until Mar. 31st! No min purchase or code needed. 🛒 Shop now
Active
2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-220AB Ins |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|
Quantity | $ per unit | Savings |
---|---|---|
1-9 | $3.36 | 0% |
10-99 | $2.67 | 21% |
100-249 | $2.28 | 32% |
250-499 | $2.22 | 34% |
500 | $2.03 | 40% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | TO-220AB Ins |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|