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STPSC6TH13TI

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2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$5.530%
10 - 99$4.9810%
100 - 499$4.0826%
500$3.4737%
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$5.53
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AB Ins

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Suited for specific bridge-less topologies
  • High forward surge capability
  • Insulated package:
    • Capacitance: 7 pF
    • Insulated voltage: 2500 V rms