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STPSC6TH13TI

2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AB Ins

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Suited for specific bridge-less topologies
  • High forward surge capability
  • Insulated package:
    • Capacitance: 7 pF
    • Insulated voltage: 2500 V rms
In stock
Quantity $ per unit Savings
1-9$3.360%
10-99$2.6721%
100-249$2.2832%
250-499$2.2234%
500$2.0340%
Contact sales
$3.36
$3.36
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AB Ins

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Suited for specific bridge-less topologies
  • High forward surge capability
  • Insulated package:
    • Capacitance: 7 pF
    • Insulated voltage: 2500 V rms