Shipping Delay:
Due to the backlog of orders caused by severe weather, order processing and shipping may be delayed. Thank you for understanding!
Active
New
STPSC8G065D
650 V, 8A High surge Silicon Carbide power Schottky diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode STPSC8G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
Read More
|
Coming Soon
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $2.66 | 1% |
| 10-99 | $1.31 | 51% |
| 100-499 | $1.19 | 56% |
| 500 | $0.95 | 65% |
| 500 + | Contact sales | |
Special Price
$2.66
Regular Price
$2.68
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode STPSC8G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
Read More
|