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STPSC8H065B-TR
650 V, 8 A High surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | DPAK |
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $2.21 | 0% |
| 10-99 | $1.91 | 14% |
| 100-250 | $1.62 | 27% |
| 250 + | Contact sales | |
$2.21
$2.21
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | DPAK |
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More
|