Active
STPSC8H065BY-TR
Automotive 650 V, 8 A Silicon Carbide Diode
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | DPAK |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $3.71 | 0% |
| 10-99 | $2.44 | 34% |
| 100-499 | $1.76 | 52% |
| 500 | $1.55 | 58% |
| 500 + | Contact sales | |
$3.71
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | DPAK |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|