STPSC8H065G-TR

650 V, 8 A High surge Silicon Carbide Power Schottky Diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features

Key features
No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: Insulated voltage: 2500 V_RMS Typical package capacitance: 7 pF Power efficient product ECOPACK^®2 compliant component

Out of Stock

Quantity	$ per unit	Savings
1-500	$3.21	0%
500 +	Contact sales

$3.21

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

Key features

Key features
No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: Insulated voltage: 2500 V_RMS Typical package capacitance: 7 pF Power efficient product ECOPACK^®2 compliant component