STPSC8H065BY-TR

STPSC8H065BY-TR

STPSC8H065G2Y-TR Active
Free

Automotive 650 V, 8 A Silicon Carbide Diode
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameD2PAK HV
Key Features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • VRRM guaranteed from -40 to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant component

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will boost performance in hard switching conditions.

In stock:
$2.55
or
Range Unit Price Savings
1 - 9$2.550%
10 - 99$2.1715%
100 - 249$1.6535%
250 - 499$1.6037%
500$1.4344%
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