STPSC8H065G2Y-TR

Automotive 650 V, 8 A Silicon Carbide Diode

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	D2PAK HV

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features

Key features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable V_RRMguaranteed from -40 to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) ECOPACK^®2 compliant component

In stock

Quantity	$ per unit	Savings
1-9	$2.58	0%
10-30	$2.24	13%
30 +	Contact sales

$2.58

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	D2PAK HV

Description

Key features

Key features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable V_RRMguaranteed from -40 to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) ECOPACK^®2 compliant component