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STPSC8H065BY-TR

STPSC8H065BY-TR

Active

STPSC8H065G2Y-TR

Automotive 650 V, 8 A Silicon Carbide Diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • VRRM guaranteed from -40 to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant component
In stock
Quantity $ per unit Savings
1-9$2.660%
10-30$2.3013%
Contact sales
$2.66
$2.66
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Recommended to PFC applications
  • PPAP capable
  • VRRM guaranteed from -40 to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
  • ECOPACK®2 compliant component