NRND
STS10P3LLH6
P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | SO-8 |
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $1.58 | 0% |
| 10-99 | $1.01 | 36% |
| 100-499 | $0.83 | 47% |
| 500 | $0.76 | 52% |
| 500 + | Contact sales | |
$1.58
$1.58
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | SO-8 |
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
|