STS10P3LLH6

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P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

Quantity $ per Unit Savings
1 - 9$1.630%
10 - 24$1.4710%
25 - 99$1.3915%
100 - 499$1.1927%
500$0.9741%
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In stock
$1.63
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss