STS10P4LLF6

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P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
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Quantity	$ per Unit	Savings
1 - 9	$1.74	0%
10 - 24	$1.57	9%
25 - 99	$1.48	14%
100	$1.26	27%
100 +	Contact Sales

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$1.73

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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO-8

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R_DS(on) in all packages.

Key features

Key features
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss

STS10P4LLF6

Active

P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package Learn More about STS10P4LLF6

P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
Learn More about STS10P4LLF6