STS7P4LLF6

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P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package

Quantity $ per Unit Savings
1 - 9$1.360%
10 - 99$1.249%
100$0.9630%
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Out of stock
$1.36
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss