Toggle Nav
Search
Advanced Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    main product photo

    Active

    STS7P4LLF6

    P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    In stock
    Quantity $ per unit Savings
    1-9$1.320%
    10-99$1.1910%
    100$0.9230%
    100 + Contact sales
    $1.32
    $1.32
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-8
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss