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STT6N3LLH6

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N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package

Quantity $ per Unit Savings
1 - 9$0.771%
10 - 99$0.6811%
100 - 200$0.5232%
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$0.77
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameSOT23-6L

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key features
  • RDS(on)* Qgindustry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses