STT6N3LLH6

Active

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Learn More about STT6N3LLH6

Quantity	$ per Unit	Savings
1 - 9	$0.77	1%
10 - 99	$0.68	11%
100 - 200	$0.52	32%
200 +	Contact Sales

In stock

$0.77

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SOT23-6L

Description

This device is an N-channel Power MOSFET developed using the 6^thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R_DS(on)in all packages.

Key features

Key features
R_DS(on)* Q_gindustry benchmark Extremely low on-resistance R_DS(on) High avalanche ruggedness Low gate drive power losses

STT6N3LLH6

Active

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package Learn More about STT6N3LLH6

N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Learn More about STT6N3LLH6