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NRND
STU4N80K5
N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in IPAK package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | IPAK |
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $1.54 | 0% |
| 10-99 | $0.91 | 41% |
| 100-249 | $0.86 | 44% |
| 250-499 | $0.86 | 44% |
| 500 | $0.73 | 52% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | IPAK |
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
|