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STW20N90K5

N-channel 900 V, 210 mOhm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
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Quantity $ per unit Savings
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100-500$3.3057%
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$7.66
$7.66
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected