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STW20N90K5

N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
In stock
Quantity $ per unit Savings
1-24$7.020%
25-99$5.6120%
100-249$5.0129%
250-500$4.4237%
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$7.02
$7.02
or
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected