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    STW23N85K5

    N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best figure of merit (FoM)
    • Ultra low gate charge
    • 100% avalanche tested
    • Zener-protected
    Out of Stock
    Quantity $ per unit Savings
    1-9$7.240%
    10-99$6.5510%
    100-500$5.4225%
    500 + Contact sales
    $7.24
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best figure of merit (FoM)
    • Ultra low gate charge
    • 100% avalanche tested
    • Zener-protected