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STW25N80K5

N-channel 800 V, 190 mOhm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Ultra-low gate charge
  • Very low FoM (figure of merit)
  • Zener-protected
  • 100% avalanche tested
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Quantity $ per unit Savings
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10-99$5.0626%
100-500$4.1040%
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$6.85
$6.85
or
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Ultra-low gate charge
  • Very low FoM (figure of merit)
  • Zener-protected
  • 100% avalanche tested