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STW55NM60ND

N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for...
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Key features
  • The worldwide best RDS(on)amongst the fast recovery diode devices in TO-247
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for...
Read More

Key features
  • The worldwide best RDS(on)amongst the fast recovery diode devices in TO-247
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities