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    STW65N040M9-4

    N-channel 650 V, 37 mOhm typ., 58 A MDmesh M9 Power MOSFET in a TO247-4 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO247-4
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure....
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    Key features
    Key features
    • Very low FOM (RDS(on)·Qg)
    • Higher dv/dt capability
    • Excellent switching performance
    • Easy to drive
    • 100% avalanche tested
    • Excellent switching performance thanks to the extra driving source pin
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    Quantity $ per unit Savings
    1-500$0.000%
    500 + Contact sales
    $0.00
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO247-4
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure....
    Read More

    Key features
    Key features
    • Very low FOM (RDS(on)·Qg)
    • Higher dv/dt capability
    • Excellent switching performance
    • Easy to drive
    • 100% avalanche tested
    • Excellent switching performance thanks to the extra driving source pin