STW82101B

STW82101B

STW82101BTR NRND

RF down converter with embedded integer-N synthesizer
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN2 44 7x7x1.0
Key Features
  • High linearity:
    • IIP3: +24.5 dBm
    • 2FRF-2FLO spurious rejection: 75 dBc
  • Noise figure:
    • NF: 9.5 dB
  • Conversion gain
    • CG: 8.5 dB
  • RF range: 695 MHz to 960 MHz
  • Wide IF amplifier frequency range: 70 MHz to 400 MHz
  • Integrated RF balun with internal matching
  • Dual differential integrated VCOs with automatic center frequency calibration:
    • LOA: 850 to 1025 MHz
    • LOB: 1025 to 1185 MHz
  • Embedded integer-N synthesizer
    • Dual modulus programmable prescaler (16/17 or 19/20)
    • Programmable reference frequency divider (10 bits)
    • Adjustable charge pump current
    • Digital lock detector
    • Excellent integrated phase noise
    • Fast lock time: 150 μs
  • Integrated DAC with dual current output
  • Supply: 3.3 V and 5 V analog, 3.3 V digital
  • Dual digital bus interface: SPI and I2C bus (fast mode) with 3 bit programmable address (1101A2A1A0)
  • Process: 0.35 μm BICMOS SiGe
  • Operating temperature range -40 to +85oC
  • 44-lead exposed pad VFQFPN package 7x7x1.0 mm
  • Applications
    • Cellular infrastructure equipment:
      • IF sampling receivers
      • Digital PA linearization loops
    • Other wireless communication systems.

The STMicroelectronics STW82101B is an integrated down converter providing 8.5 dB of gain, 9.5 dB NF, and a very high input linearity by means of its passive mixer.


Embedding two wide band auto calibrating VCOs and an integer-N synthesizer, the STW82101B is suitable for both Rx and Tx requirements for Cellular infrastructure equipment.


The integrated RF balun and internal matching permit direct 50 ohm single-ended interface to RF port. The IF output is suitable for driving 200-ohm impedance filters.


By embedding a DAC with dual current output to drive an external PIN diode attenuator, the STW82101B replaces several costly discrete components and offers a significant footprint reduction.


The STW82101B device is designed with STMicroelectronics advanced 0.35 μm SiGe process. Its performance is specified over a -40 °C to +85 °C temperature range.

Out of stock
$14.40
Range Unit Price Savings
1 - 9$14.400%
10 - 24$13.238%
25 - 99$12.6812%
100 - 249$11.1722%
250 - 499$10.6526%
500$10.3328%
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