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    STW8N90K5

    N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected
    In stock
    Quantity $ per unit Savings
    1-9$4.220%
    10-20$2.4542%
    20 + Contact sales
    $4.22
    $4.22
    or
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected