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NRND

TIP35CP

COMPLEMENTARY HIGH POWER TRANSISTORS

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-3P

The devices are manufactured in planar technology with \base island\ layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key features
  • Low collector-emitter saturation voltage
  • Complementary NPN-PNP transistors
In stock
Quantity $ per unit Savings
1-9$2.760%
10-24$2.596%
25-30$2.2319%
Contact sales
$2.76
$2.76
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-3P

The devices are manufactured in planar technology with \base island\ layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key features
  • Low collector-emitter saturation voltage
  • Complementary NPN-PNP transistors