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    Special offer on selected Evaluation Tools. Use code AUG-EVALTOOLS-01-10OFF and explore the full selection. Buy now!

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    VNF1248FTR

    High-side switch controller with STi2Fuse protection for 12 V, 24 V and 48 V automotive applications

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameQFN-32L WF
    Description

    The device is an advanced controller for a Power MOSFET in high-side configuration, designed for the implementation of an intelligent high-side switch for 12 V, 24 V, and 48 V automotive applications. The control IC is interfaced to a host microcontroller through a 3.3 V and 5 V CMOS-compatible SPI...
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    Key features
    Key features
    • AEC-Q100 qualified
    • General
      • High-side
        switch control IC with e-fuse protection for automotive
        12 V, 24 V and 48 V applications
      • 32-bit ST-SPI interface compatible with 3.3 V and 5 V
        CMOS level
      • 2-stage charge pump
      • Gate drive
        for an external MOSFET in high-side configuration
      • High precision
        uni-directional current sense through an external high
        side shunt resistor
      • Input for a NTC resistor to monitor the external MOSFET
        temperature
      • Very low standby current
      • Device configuration lock out by a dedicated digital
        input pin
      • Integrated ADC for TJ, VNTC, VOUT, VSENSE
        conversion

      • Fast ADC for VDS, VSENSE conversion
      • CCM: capacitive
        charging mode
      • Few times programmable
        non-volatile memory (FTP NVM) embedded for customer sector
        program/erase/read
      • Direct input pin for hardware control of external MOSFET
        gate pin
      • Package QFN32L 5x5
        package with wettable flanks
    • Protections
      • Battery undervoltage shut-down
      • External MOSFET desaturation shutdown configurable via SPI
      • Hard short circuit latch-off configurable via SPI
      • Current vs time latch-off configurable via SPI (fuse-emulation)
      • Device overtemperature shutdown
      • External MOSFET overtemperature shutdown
      • Reverse battery
      • Loss of GND
    Out of Stock
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameQFN-32L WF
    Description

    The device is an advanced controller for a Power MOSFET in high-side configuration, designed for the implementation of an intelligent high-side switch for 12 V, 24 V, and 48 V automotive applications. The control IC is interfaced to a host microcontroller through a 3.3 V and 5 V CMOS-compatible SPI...
    Read More

    Key features
    Key features
    • AEC-Q100 qualified
    • General
      • High-side
        switch control IC with e-fuse protection for automotive
        12 V, 24 V and 48 V applications
      • 32-bit ST-SPI interface compatible with 3.3 V and 5 V
        CMOS level
      • 2-stage charge pump
      • Gate drive
        for an external MOSFET in high-side configuration
      • High precision
        uni-directional current sense through an external high
        side shunt resistor
      • Input for a NTC resistor to monitor the external MOSFET
        temperature
      • Very low standby current
      • Device configuration lock out by a dedicated digital
        input pin
      • Integrated ADC for TJ, VNTC, VOUT, VSENSE
        conversion

      • Fast ADC for VDS, VSENSE conversion
      • CCM: capacitive
        charging mode
      • Few times programmable
        non-volatile memory (FTP NVM) embedded for customer sector
        program/erase/read
      • Direct input pin for hardware control of external MOSFET
        gate pin
      • Package QFN32L 5x5
        package with wettable flanks
    • Protections
      • Battery undervoltage shut-down
      • External MOSFET desaturation shutdown configurable via SPI
      • Hard short circuit latch-off configurable via SPI
      • Current vs time latch-off configurable via SPI (fuse-emulation)
      • Device overtemperature shutdown
      • External MOSFET overtemperature shutdown
      • Reverse battery
      • Loss of GND
    Associated products