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    2STR2160

    _

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOT-23
    Description

    The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.


    The complementary NPN is the 2STR1160.

    Key features
    Key features
    • Very low collector-emitter saturation voltage
    • High current gain characteristic
    • Fast switching speed
    • Miniature SOT-23 plastic package for surface mounting circuits
    Out of Stock
    Quantity $ per unit Savings
    1-9$0.500%
    10-99$0.4119%
    100-500$0.2453%
    500 + Contact sales
    $0.50
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOT-23
    Description

    The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.


    The complementary NPN is the 2STR1160.

    Key features
    Key features
    • Very low collector-emitter saturation voltage
    • High current gain characteristic
    • Fast switching speed
    • Miniature SOT-23 plastic package for surface mounting circuits