Power Transistors
- STGP20H65DFB2 ActiveTrench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package
- -55.0
- 175.0
- EAR99
- NEC
- Tube
- Ecopack2
STGB20H65DFB2 ActiveTrench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package- -55.0
- 175.0
- EAR99
- NEC
- Tape And Reel
- Ecopack2
STGP20H65FB2 ActiveTrench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package- -55.0
- 175.0
- EAR99
- NEC
- Tube
- Ecopack2
STGF20H65DFB2 ActiveFreeTrench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package- -55.0
- 175.0
- EAR99
- NEC
- Tube
- Ecopack2
STGW75H65DFB2-4 ActiveFreeTrench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package- EAR99
- NEC
- Tube
- Ecopack2
- Industrial
- TO247-4
STGW50H65DFB2-4 ActiveTrench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package- EAR99
- NEC
- Tube
- Ecopack2
- Industrial
- TO247-4
STL260N4LF7 ActiveN-channel 40 V, 0.00085 Ohm typ., 50 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package- EAR99
- NEC
- Tape And Reel
- Ecopack2
- Industrial
- PowerFLAT 5x6
- EAR99
- NEC
- Tape And Reel
- Ecopack2
- Industrial
- DPAK
SCT1000N170AG ActiveAutomotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 pa- EAR99
- NEC
- Tube
- Ecopack2
- Automotive
- HIP247
SCT20N170AG ActiveAutomotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 p- EAR99
- NEC
- Tube
- Ecopack2
- Automotive
- HIP247
Power Transistors
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