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This ACEPACK 2 power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology from STMicroelectronics. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature. An NTC sensor completes the design.
