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N-channel 650 V, 93 mOhm typ., 32 A MDmesh DM2 Power MOSFET in a D2PAK package
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Automotive 1200 V, 40A power Schottky High Surge silicon carbide diode
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Trench gate field-stop 1200 V, 40 A low loss M series IGBT die in D7 packing
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Automotive-grade N-channel 650 V, 68 mOhm typ., 42 A MDmesh DM6 Power MOSFET in a TO-247 long leads
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 512 Kbytes of Flash memory, 1