EVLSTGAP3S6S

Half-bridge evaluation board for STGAP3S6S SiC MOSFETs isolated gate driver with protections

Parameters

Core Product	STGAP3S6S
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

The EVLSTGAP3S6S is a half-bridge evaluation board designed to evaluate the STGAP3S6S isolated single gate driver.The STGAP3S6S is characterized by 6 A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for SiC MOSFETS, which makes the device optimal for...
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Key features

Key features
Board Half-bridge configuration High-voltage rail up to 520 V (limited by the MOSFET’s and capacitor’s rating) SCTH60N120G2-7 SiC MOSFETs: 1200 V, 52 mΩ, 60 A Compatible with 5 V and 3.3 V MCUs VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV_pk maximum isolation Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V; +17/0 V; +17/-4.7 V Fault LED indicators Maximum working voltage across isolation: 1200 V RoHS compliant STGAP3SXS device Driver current capability: 6 A source/sink @ 25 °C 75 ns input-output propagation delay Miller CLAMP driver for external N-channel MOSFET Adjustable soft turn-off function UVLO function Desaturation protection Gate driving voltage up to 32 V Negative gate driving voltage 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Reinforced galvanic isolation:Isolation voltage V_ISO = 5.7 kV_RMS (according to UL 1577)Transient overvoltage V_IOTM = 8 kV_PEAK (according to IEC 60747-17)Max. repetitive isolation voltage V_IORM = 1.2 kV_PEAK (according to IEC 60747-17)

In stock

Quantity	$ per unit	Savings
1-2	$55.14	0%
2 +	Contact sales

$55.14

$55.13

Parameters

Core Product	STGAP3S6S
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	CARD

Description

Key features

Key features
Board Half-bridge configuration High-voltage rail up to 520 V (limited by the MOSFET’s and capacitor’s rating) SCTH60N120G2-7 SiC MOSFETs: 1200 V, 52 mΩ, 60 A Compatible with 5 V and 3.3 V MCUs VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5 V, with 5.2 kV_pk maximum isolation Easy jumper selection of driving voltage configuration:+19/0 V; +19/-4.7 V; +17/0 V; +17/-4.7 V Fault LED indicators Maximum working voltage across isolation: 1200 V RoHS compliant STGAP3SXS device Driver current capability: 6 A source/sink @ 25 °C 75 ns input-output propagation delay Miller CLAMP driver for external N-channel MOSFET Adjustable soft turn-off function UVLO function Desaturation protection Gate driving voltage up to 32 V Negative gate driving voltage 3.3 V, 5 V TTL/CMOS inputs with hysteresis Temperature shutdown protection Reinforced galvanic isolation:Isolation voltage V_ISO = 5.7 kV_RMS (according to UL 1577)Transient overvoltage V_IOTM = 8 kV_PEAK (according to IEC 60747-17)Max. repetitive isolation voltage V_IORM = 1.2 kV_PEAK (according to IEC 60747-17)