📢 $9.99 flat rate shipping in EMEA countries! Ends April 30th - Don't Miss Out!. 🛒 Shop now

Active

HCF4010YM013TR

Hex Buffer/Converters non Inverting

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4010 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in an SO16 package.It is a non-inverting hex buffer/converter and can be used as a CMOS to TTL logic level converter, as a current “sink” or “source” driver, or as a...
Read More

Key features
  • Propagation delay time
    • tPD= 50 ns (typ.) at VDD= 10 V, CL= 50 pF
  • High to low level logic conversion
  • Multiplexer: 1 to 6 or 6 to 1
  • High “sink” and “source” current capability
  • Quiescent current specified up to 20 V
  • 5 V, 10 V and 15 V parametric ratings
  • Input leakage current
  • II= 100 nA (max.) at VDD= 18 V, TA= 25 °C 100% tested for quiescent current
  • ESD performance
    • CDM: 1 kV
    • HBM: 1 kV
    • MM: 150 V
In stock
Quantity $ per unit Savings
1-9$0.460%
10-24$0.4112%
25-99$0.3916%
100-500$0.3525%
Contact sales
$0.46
$0.46
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4010 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in an SO16 package.It is a non-inverting hex buffer/converter and can be used as a CMOS to TTL logic level converter, as a current “sink” or “source” driver, or as a...
Read More

Key features
  • Propagation delay time
    • tPD= 50 ns (typ.) at VDD= 10 V, CL= 50 pF
  • High to low level logic conversion
  • Multiplexer: 1 to 6 or 6 to 1
  • High “sink” and “source” current capability
  • Quiescent current specified up to 20 V
  • 5 V, 10 V and 15 V parametric ratings
  • Input leakage current
  • II= 100 nA (max.) at VDD= 18 V, TA= 25 °C 100% tested for quiescent current
  • ESD performance
    • CDM: 1 kV
    • HBM: 1 kV
    • MM: 150 V