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    HCF4010YM013TR

    Hex Buffer/Converters non Inverting

    Parameters
    Supply Voltage Min Volt3.0
    Supply Voltage Max Volt20.0
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameSO-16
    Description

    The HCF4010 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in an SO16 package.It is a non-inverting hex buffer/converter and can be used as a CMOS to TTL logic level converter, as a current “sink” or “source” driver, or as a...
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    Key features
    Key features
    • Propagation delay time
      • tPD= 50 ns (typ.) at VDD= 10 V, CL= 50 pF
    • High to low level logic conversion
    • Multiplexer: 1 to 6 or 6 to 1
    • High “sink” and “source” current capability
    • Quiescent current specified up to 20 V
    • 5 V, 10 V and 15 V parametric ratings
    • Input leakage current
    • II= 100 nA (max.) at VDD= 18 V, TA= 25 °C 100% tested for quiescent current
    • ESD performance
      • CDM: 1 kV
      • HBM: 1 kV
      • MM: 150 V
    Out of Stock
    Parameters
    Supply Voltage Min Volt3.0
    Supply Voltage Max Volt20.0
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameSO-16
    Description

    The HCF4010 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in an SO16 package.It is a non-inverting hex buffer/converter and can be used as a CMOS to TTL logic level converter, as a current “sink” or “source” driver, or as a...
    Read More

    Key features
    Key features
    • Propagation delay time
      • tPD= 50 ns (typ.) at VDD= 10 V, CL= 50 pF
    • High to low level logic conversion
    • Multiplexer: 1 to 6 or 6 to 1
    • High “sink” and “source” current capability
    • Quiescent current specified up to 20 V
    • 5 V, 10 V and 15 V parametric ratings
    • Input leakage current
    • II= 100 nA (max.) at VDD= 18 V, TA= 25 °C 100% tested for quiescent current
    • ESD performance
      • CDM: 1 kV
      • HBM: 1 kV
      • MM: 150 V