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HCF4013YM013TR

Dual D Flip-Flop

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF4013 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in PDIP14 and SO14 packages.The HCF4013 consists of two identical, independent data type flip-flops. Each flip-flop has independent data, set, reset, and clock inputs, and Q and Qoutputs....
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Key features
  • Set-reset capability
  • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”
  • Medium speed operation 16 MHz (typ.), clock toggle rate at 10 V
  • Standardized symmetrical output characteristics
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100 % tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV
In stock
Quantity $ per unit Savings
1-9$0.810%
10-99$0.7211%
100-170$0.5334%
Contact sales
$0.81
$0.81
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF4013 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in PDIP14 and SO14 packages.The HCF4013 consists of two identical, independent data type flip-flops. Each flip-flop has independent data, set, reset, and clock inputs, and Q and Qoutputs....
Read More

Key features
  • Set-reset capability
  • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”
  • Medium speed operation 16 MHz (typ.), clock toggle rate at 10 V
  • Standardized symmetrical output characteristics
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100 % tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV