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HCF4021YM013TR

8-Stage Static Shift Register

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4021 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in PDIP-16 and SO-16 packages.This device is an 8-stage parallel or serial-input/serial-output register having common clock and parallel/serial control inputs, a single serial data input, and...
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Key features
  • Medium speed operation: 12 MHz (typ.) clock rate at VDD- VSS= 10 V
  • Fully static operation
  • 8 master-slave flip-flops plus output buffering and control gating
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • CDM: 1 kV
    • HBM: 2 kV
    • MM: 200 V
In stock
Quantity $ per unit Savings
1-9$1.1415%
10-99$0.981%
100-499$0.7623%
500$0.6634%
Contact sales
$1.14
$0.99
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4021 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in PDIP-16 and SO-16 packages.This device is an 8-stage parallel or serial-input/serial-output register having common clock and parallel/serial control inputs, a single serial data input, and...
Read More

Key features
  • Medium speed operation: 12 MHz (typ.) clock rate at VDD- VSS= 10 V
  • Fully static operation
  • 8 master-slave flip-flops plus output buffering and control gating
  • Quiescent current specified up to 20 V
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100% tested for quiescent current
  • ESD performance
    • CDM: 1 kV
    • HBM: 2 kV
    • MM: 200 V