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HCF4051YM013TR

Single 8-channel analog multiplexer/demultiplexer

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4051 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in SO-16 and PDIP-16 packages.The HCF4051 analog multiplexer/demultiplexer is a digitally controlled analog switch having low ON impedance and very low OFF leakage current. This...
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Key features
  • Low “ON” resistance: 125 Ω (typ.)
  • Over 15 V p.p signal-input range for VDD- VEE= 15 V
  • High “OFF” resistance, channel leakage: ± 100 pA (typ.) at VDD- VEE= 18 V
  • Binary address decoding on chip
  • High degree of linearity: < 0.5 % distortion typ. at fIS= 1 KHz, VIS= 5 Vpp, VDD- VSS≥ 10 V, RL= 10 kΩ
  • Very low quiescent power dissipation under all digital control input and supply conditions: 0.2 μW (typ.) VDD- VSS= VDD- VEE= 10 V
  • Matched switch characteristics: RON= 5 Ω (typ.) for VDD- VEE= 15 V
  • Wide range of digital and analog signal levels: digital 3 to 20, analog to 20 V p.p.
  • Quiescent current specified up to 20 V
  • 5 V, 10 V and 15 V parametric ratings
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 750 V
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100 % tested for quiescent current
In stock
Quantity $ per unit Savings
1-9$0.870%
10-24$0.6822%
25-99$0.6328%
100-249$0.5833%
250-499$0.5636%
500$0.5241%
Contact sales
$0.87
$0.87
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameSO-16

The HCF4051 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in SO-16 and PDIP-16 packages.The HCF4051 analog multiplexer/demultiplexer is a digitally controlled analog switch having low ON impedance and very low OFF leakage current. This...
Read More

Key features
  • Low “ON” resistance: 125 Ω (typ.)
  • Over 15 V p.p signal-input range for VDD- VEE= 15 V
  • High “OFF” resistance, channel leakage: ± 100 pA (typ.) at VDD- VEE= 18 V
  • Binary address decoding on chip
  • High degree of linearity: < 0.5 % distortion typ. at fIS= 1 KHz, VIS= 5 Vpp, VDD- VSS≥ 10 V, RL= 10 kΩ
  • Very low quiescent power dissipation under all digital control input and supply conditions: 0.2 μW (typ.) VDD- VSS= VDD- VEE= 10 V
  • Matched switch characteristics: RON= 5 Ω (typ.) for VDD- VEE= 15 V
  • Wide range of digital and analog signal levels: digital 3 to 20, analog to 20 V p.p.
  • Quiescent current specified up to 20 V
  • 5 V, 10 V and 15 V parametric ratings
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 750 V
  • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
  • 100 % tested for quiescent current