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    HCF4051YM013TR

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    Single 8-channel analog multiplexer/demultiplexer
    Learn More about HCF4051YM013TR

    Quantity $ per Unit Savings
    1 - 9$1.480%
    10 - 24$1.3310%
    25 - 99$1.2615%
    100 - 249$1.0430%
    250 - 499$0.9735%
    500$0.8642%
    500 + Contact Sales
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    In stock
    $1.48
    Parameter NameParameter Value
    Supply Voltage Min Volt3.0
    Supply Voltage Max Volt20.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeAutomotive
    Package NameSO-16

    The HCF4051 device is a monolithic integrated circuit fabricated in MOS (metal oxide semiconductor) technology available in SO-16 and PDIP-16 packages.


    The HCF4051 analog multiplexer/demultiplexer is a digitally controlled analog switch having low ON impedance and very low OFF leakage current. This multiplexer circuit dissipates extremely low quiescent power over the full VDD- VSSand VDD- VEEsupply voltage range, independent of the logic state of the control signals.


    This device is a single 8-channel multiplexer having three binary control inputs, A, B, and C, and an inhibit input. The three binary signals select 1 of 8 channels to be turned on, and connect one of the 8 inputs to the output. When a logic “1” is present at the inhibit input terminal all channels are off.

    Key features
    • Low “ON” resistance: 125 Ω (typ.)
    • Over 15 V p.p signal-input range for VDD- VEE= 15 V
    • High “OFF” resistance, channel leakage: ± 100 pA (typ.) at VDD- VEE= 18 V
    • Binary address decoding on chip
    • High degree of linearity: < 0.5 % distortion typ. at fIS= 1 KHz, VIS= 5 Vpp, VDD- VSS≥ 10 V, RL= 10 kΩ
    • Very low quiescent power dissipation under all digital control input and supply conditions: 0.2 μW (typ.) VDD- VSS= VDD- VEE= 10 V
    • Matched switch characteristics: RON= 5 Ω (typ.) for VDD- VEE= 15 V
    • Wide range of digital and analog signal levels: digital 3 to 20, analog to 20 V p.p.
    • Quiescent current specified up to 20 V
    • 5 V, 10 V and 15 V parametric ratings
    • ESD performance
      • HBM: 2 kV
      • MM: 200 V
      • CDM: 750 V
    • Input leakage current II= 100 nA (max.) at VDD= 18 V, TA= 25 °C
    • 100 % tested for quiescent current