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HCF4093YM013TR

Quad 2-Input NAND Schmitt Trigger

Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF4093 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in the SO14 package.The HCF4093 consists of four Schmitt trigger circuits. Each circuit function has a 2-input NAND gate with Schmitt trigger action on both inputs. The gate switches at...
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Key features
  • Schmitt trigger action on each input with no external components
  • Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD =10 V
  • Noise immunity greater than 50 % of VDD ( typ.)
  • No limit on input rise and fall times
  • Quiescent current specified up to 20 V
  • Standardized symmetrical output characteristics
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD = 18 V and TA= 25 °C
  • 100 % tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV
In stock
Quantity $ per unit Savings
1-9$0.761%
10-99$0.6119%
100-400$0.5331%
Contact sales
$0.76
$0.76
Supply Voltage Min Volt3.0
Supply Voltage Max Volt20.0
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeAutomotive
Package NameSO-14

The HCF4093 is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in the SO14 package.The HCF4093 consists of four Schmitt trigger circuits. Each circuit function has a 2-input NAND gate with Schmitt trigger action on both inputs. The gate switches at...
Read More

Key features
  • Schmitt trigger action on each input with no external components
  • Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD =10 V
  • Noise immunity greater than 50 % of VDD ( typ.)
  • No limit on input rise and fall times
  • Quiescent current specified up to 20 V
  • Standardized symmetrical output characteristics
  • 5 V, 10 V, and 15 V parametric ratings
  • Input leakage current II= 100 nA (max.) at VDD = 18 V and TA= 25 °C
  • 100 % tested for quiescent current
  • ESD performance
    • HBM: 2 kV
    • MM: 200 V
    • CDM: 1 kV