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M95P08-IXMCT/E

M95P08-IXMCT/E

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M95P08-IXMNT/E

Ultra low-power 8 Mbit Serial SPI Page EEPROM

Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology.The M95P08-I and M95P08-E are an 8-Mbit SPI page...
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Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
  • High speed frequency
    • Clock frequency up to 80 MHz
    • Fast read single/dual/quad output with one dummy byte
      • Dual output data transfer up to 160 Mbits/s
      • Quad output data transfer up to 320Mbits/s
  • Memory
    • 8 Mbits of page EEPROM
    • 64-Kbyte blocks, 4-Kbyte sectors
    • Page size: 512-byte
    • Two additional 512-byte identification pages
  • Supply voltage
    • Wide voltage range: VCC from 1.6 to 3.6 V
  • Temperature
    • Operating temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
  • Performance
    • Write endurance: 500 kcycles on full temperature range
    • Data retention
      • 100 years
      • 10 years after 500 kcycles
  • Ultra-low power consumption
    • 0.6 μA (typ) in Deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write / erase performance
    • Fast write / program / erase times:
      • 2 ms (typ) for Byte and Page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for Page program (512 bytes)
      • 1.1 ms (typ) for Page erase
      • 1.3 ms (typ) for sector erase
      • 4 ms (typ) for block erase
      • 4 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC, TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 2 x 3 mm
      • SO8N
      • WLCSP8
  • ESD protection
    • Enhanced ESD HBM (human body model)
In stock
Quantity $ per unit Savings
1-9$0.721%
10-99$0.6510%
100-250$0.5721%
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$0.72
$0.72
Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology.The M95P08-I and M95P08-E are an 8-Mbit SPI page...
Read More

Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
  • High speed frequency
    • Clock frequency up to 80 MHz
    • Fast read single/dual/quad output with one dummy byte
      • Dual output data transfer up to 160 Mbits/s
      • Quad output data transfer up to 320Mbits/s
  • Memory
    • 8 Mbits of page EEPROM
    • 64-Kbyte blocks, 4-Kbyte sectors
    • Page size: 512-byte
    • Two additional 512-byte identification pages
  • Supply voltage
    • Wide voltage range: VCC from 1.6 to 3.6 V
  • Temperature
    • Operating temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
  • Performance
    • Write endurance: 500 kcycles on full temperature range
    • Data retention
      • 100 years
      • 10 years after 500 kcycles
  • Ultra-low power consumption
    • 0.6 μA (typ) in Deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write / erase performance
    • Fast write / program / erase times:
      • 2 ms (typ) for Byte and Page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for Page program (512 bytes)
      • 1.1 ms (typ) for Page erase
      • 1.3 ms (typ) for sector erase
      • 4 ms (typ) for block erase
      • 4 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC, TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 2 x 3 mm
      • SO8N
      • WLCSP8
  • ESD protection
    • Enhanced ESD HBM (human body model)