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M95P16-IXCST/EF

M95P16-IXCST/EF

Active

M95P16-IXMNT/E

Ultra low-power 16 Mbit Serial SPI Page EEPROM

Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The M95P16-I and M95P16-E (hereinafter referred to complessively as M95P16) are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra low power consumption, equivalent to that of EEPROM technology.These...
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Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
    • Wide voltage range: VCC from 1.6 to 3.6 V
    • Temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
    • Fast read:
      • 50 MHz read single output
      • 80 MHz fast read single/dual/quad output with one dummy byte
  • Memory
    • 16 Mbit of page EEPROM
      • 32-Kbyte blocks, 4-Kbyte sectors
      • Page size: 512 bytes
      • Two identification pages
    • Write endurance:
      • 500 kcycles on full temperature range
    • Data retention:
      • 100 years
      • 10 years after 500 kcycles
  • Ultra low power consumption
    • 0.6 μA (typ) in Deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write/erase performance
    • Fast write/program/erase times:
      • 2.0 ms (typ) for byte and page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for page program (512 bytes)
      • 1.1 ms (typ) for page erase
      • 1.3 ms (typ) for sector erase
      • 4.0 ms (typ) for block erase
      • 8 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC, TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 2 x 3 mm
      • SO8N
      • WLCSP8
  • ESD protection
    • HBM (human body model): 2000 V
In stock
Quantity $ per unit Savings
1-9$1.260%
10-25$1.177%
Contact sales
$1.26
$1.26
Supply Voltage Min Volt1.6
Supply Voltage Max Volt3.6
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius85.0
ECCN US3A991.b.1.b.1
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-8

The M95P16-I and M95P16-E (hereinafter referred to complessively as M95P16) are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra low power consumption, equivalent to that of EEPROM technology.These...
Read More

Key features
  • Interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
    • Wide voltage range: VCC from 1.6 to 3.6 V
    • Temperature range:
      • -40 °C to +85 °C (industrial)
      • -40 °C to +105 °C (extended)
    • Fast read:
      • 50 MHz read single output
      • 80 MHz fast read single/dual/quad output with one dummy byte
  • Memory
    • 16 Mbit of page EEPROM
      • 32-Kbyte blocks, 4-Kbyte sectors
      • Page size: 512 bytes
      • Two identification pages
    • Write endurance:
      • 500 kcycles on full temperature range
    • Data retention:
      • 100 years
      • 10 years after 500 kcycles
  • Ultra low power consumption
    • 0.6 μA (typ) in Deep power-down mode
    • 16 μA (typ) in Standby mode
    • 800 μA (typ) for read single at 10 MHz
    • 1.5 mA (typ) for page write
    • Current peak control < 3 mA
  • High write/erase performance
    • Fast write/program/erase times:
      • 2.0 ms (typ) for byte and page write (includes auto erase and program) for 512 bytes
      • 1.2 ms (typ) for page program (512 bytes)
      • 1.1 ms (typ) for page erase
      • 1.3 ms (typ) for sector erase
      • 4.0 ms (typ) for block erase
      • 8 ms (typ) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC, TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Supports SFDP (serial flash discoverable parameters) mode
    • JEDEC standard manufacturer identification
  • Package
    • ECOPACK2 (RoHS compliant) and halogen-free packages:
      • DFN8 2 x 3 mm
      • SO8N
      • WLCSP8
  • ESD protection
    • HBM (human body model): 2000 V