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PD54008-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $14.96 | 0% |
| 10-49 | $11.83 | 21% |
| 50-99 | $10.58 | 29% |
| 100-249 | $10.19 | 32% |
| 250-399 | $9.79 | 35% |
| 400-500 | $9.33 | 38% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More
|