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    PD55003-E

    PD55003-E

    PD55003TR-E

    PD55003TR-E

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    PD55003S-E

    RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerSO-10RF (straight lead)
    Description

    The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain,...
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    Key features
    Key features
    • Excellent thermal stability
    • Common source configuration
    • POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V
    In stock
    Quantity $ per unit Savings
    1-9$11.690%
    10$10.4011%
    10 + Contact sales
    $11.69
    $11.69
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerSO-10RF (straight lead)
    Description

    The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain,...
    Read More

    Key features
    Key features
    • Excellent thermal stability
    • Common source configuration
    • POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V