NRND

RF2L36075CF2

75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB2

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC
In stock
Quantity $ per unit Savings
1$127.803%
Contact sales
$127.80
$124.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB2

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC