RF5L08350CB4

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	N/A
Grade	Industrial
Package Name	B4E

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Key features

Key features
High efficiency and linear gain operations Integrated ESD protection Internally matched for ease of use Large positive and negative gate-source voltage range for improved class C operation Excellent thermal stability, low HCI drift In compliance with the European Directive 2002/95/EC

In stock

Quantity	$ per unit	Savings
1	$142.30	0%
1 +	Contact sales

$142.30

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	N/A
Grade	Industrial
Package Name	B4E

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Key features

Key features
High efficiency and linear gain operations Integrated ESD protection Internally matched for ease of use Large positive and negative gate-source voltage range for improved class C operation Excellent thermal stability, low HCI drift In compliance with the European Directive 2002/95/EC