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RF5L08350CB4

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400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Quantity $ per Unit Savings
1$151.780%
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In stock
$151.78
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB4E

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European Directive 2002/95/EC