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    RF5L08350CB4

    400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameB4E
    Description

    The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European Directive 2002/95/EC
    In stock
    Quantity $ per unit Savings
    1$141.790%
    1 + Contact sales
    $141.79
    $141.79
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameB4E
    Description

    The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European Directive 2002/95/EC