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NRND

RF5L08350CB4

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB4E

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European Directive 2002/95/EC
In stock
Quantity $ per unit Savings
1-9$142.190%
10-24$122.6014%
25-119$122.4714%
120-500$122.4614%
Contact sales
$142.19
$141.79
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB4E

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European Directive 2002/95/EC