RF5L10111K0CB4

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1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor

Quantity $ per Unit Savings
1 - 500$188.160%
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Out of stock
$188.16
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD4E
Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European directive 2002/95/EC