Active
SCT020W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|
Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $23.87 | 0% |
| 10-24 | $21.21 | 11% |
| 25-49 | $19.79 | 17% |
| 50-99 | $19.17 | 20% |
| 100-249 | $18.55 | 22% |
| 250-500 | $17.32 | 27% |
| 500 + | Contact sales | |
$23.87
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|